Trench photosensor for a CMOS imager

Details Trench photosensor for a CMOS imager Trench photosensor for a CMOS imager

2008-10-01

2010-02-02

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21001, C257SE27130, C356S435000

Reexamination Certificate

active

07655494

ABSTRACT:
A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the trench photosensor.

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