Trench MOSFETS with ESD Zener diode

Details Trench MOSFETS with ESD Zener diode Trench MOSFETS with ESD Zener diode

2011-08-23

2011-08-23

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S328000, C257S333000, C257S551000, C257SE29262, C257SE29335, C438S140000

Reexamination Certificate

active

08004009

ABSTRACT:
A semiconductor power device with Zener diode for providing an electrostatic discharge (ESD) protection and a thick insulation layer to insulate the Zener diode from a doped body region. The semiconductor power device further includes a Nitride layer underneath the thick oxide layer working as a stopper layer for protecting the thin oxide layer and the body region underneath whereby the over-etch damage and punch-through issues in process steps are eliminated.

REFERENCES:
patent: 2007/0176239 (2007-08-01), Hshieh
patent: 2009/0140333 (2009-06-01), Pan et al.

Affiliated with

Also associated with

Rating

Trench MOSFETS with ESD Zener diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench MOSFETS with ESD Zener diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench MOSFETS with ESD Zener diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662853