Trench MOS Schottky barrier rectifier with high k gate...

Details Trench MOS Schottky barrier rectifier with high k gate... Trench MOS Schottky barrier rectifier with high k gate...

2007-02-23

2009-02-10

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Forming schottky junction

C438S104000, C438S240000, C438S700000, C257SE21064, C257SE21170, C257SE21173, C257SE21235, C257SE21278

Reexamination Certificate

active

07488673

ABSTRACT:
A trench MOS Schottky barrier device has a metal oxide gate dielectric such as TiSi lining the trench wall to increase the efficiency of the elemental cell and to improve depletion in the mesa during reverse bias. A reduced mask process is used in which a single layer of titanium or other metal is deposited on an underlying gate oxide layer on the trench walls and directly atop the mesa between adjacent trenches. A common thermal treatment causes the Ti to diffuse into the SiO2gate oxide to form the TiO2gate and to form the TiSi Schottky barrier on the top surface of the mesa.

REFERENCES:
patent: 5365102 (1994-11-01), Mehrotra et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5612567 (1997-03-01), Baliga
patent: 6855593 (2005-02-01), Andoh et al.
patent: 7323402 (2008-01-01), Chiola

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