Trench monos memory cell and array

Details Trench monos memory cell and array Trench monos memory cell and array

2009-04-06

2011-12-20

Hidalgo, Fernando N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290, C365S185050, C365S185140, C365S174000, C257S324000, C257SE29309

Reexamination Certificate

active

08081515

ABSTRACT:
The MONOS vertical memory cell of the present invention allow miniaturization of the memory cell area. The two embodiments of split gate and single gate provide for efficient program and erase modes as well as preventing read disturb in the read mode.

REFERENCES:
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patent: 5229312 (1993-07-01), Mukherjee et al.
patent: 5966603 (1999-10-01), Eitan
patent: 6051860 (2000-04-01), Odanaka et al.
patent: 2007/0187746 (2007-08-01), Kashimura
patent: 2008/0057647 (2008-03-01), Ho et al.

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