Trench mask for forming deep trenches in a semiconductor substra

Details Trench mask for forming deep trenches in a semiconductor substra Trench mask for forming deep trenches in a semiconductor substra

1996-01-30

1997-11-11

Dang, Trung

Fishing, trapping, and vermin destroying

437 73, 1566431, 148DIG50, H01L 2176

Patent

active

056863454

ABSTRACT:
A method for forming high aspect ratio, deep trenches in a semiconductor substrate with a composite etch mask structure including a thermally grown oxide surface layer as a plasma etch mask.

REFERENCES:
patent: 5008210 (1991-04-01), Chiang et al.
patent: 5118384 (1992-06-01), Harmon et al.

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