Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2006-09-30
2010-06-15
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S197000, C257S477000, C257SE29013, C257SE29148, C257SE29262, C257SE29338
Reexamination Certificate
active
07737522
ABSTRACT:
A Schottky diode includes at least a trenched opened in a semiconductor substrate doped with a dopant of a first conductivity type wherein the trench is filled with a Schottky junction barrier metal. The Schottky diode further includes one or more dopant region of a second conductivity type surrounding sidewalls of the trench distributed along the depth of the trench for shielding a reverse leakage current through the sidewalls of the trench. The Schottky diode further includes a bottom-doped region of the second conductivity type surrounding a bottom surface of the trench and a top-doped region of the second conductivity type surrounding a top portion of the sidewalls of the trench. In a preferred embodiment, the first conductivity type is a N-type conductivity type and the middle-depth dopant region comprising a P-dopant region.
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Bhalla Anup
Lui Sik K
Alpha & Omega Semiconductor Ltd.
Gupta Raj
Lin Bo-In
Pizarro Marcos D
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