Trench isolation with rounded top and bottom corners and edges

Details Trench isolation with rounded top and bottom corners and edges Trench isolation with rounded top and bottom corners and edges

1996-03-28

1999-01-19

Knode, Marian C.

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

B44C 122

Patent

active

058611045

ABSTRACT:
An integrated circuit device includes a substrate having a planar surface and isolating trenches etched from the substrate. The isolating trenches form corners with the surface of the substrate. The corners are shaped as slanted regions, having a 111-crystal plane structure. When a gate oxide layer is grown over the substrate, the trench corners will have a gate oxide layer of a greater thickness than the rest of the trench, thereby reducing parasitic transistors.

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Fuse, Genshu; Fukumoto, Masanori; Shinohara, Akihira; Odanaka, Shinji; Sasago, Masaru and Ohzone, Takashi, "A New Isolation Method with Boron-Implanted Sidewalls for Controlling Narrow-Width Effect" IEEE Transactions On Electron Devices, vol. ED-34, No. 2, Feb., 1987.
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