Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-04-15
2008-04-15
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S506000, C257S507000, C257SE21549, C438S427000, C438S425000, C438S424000, C438S443000
Reexamination Certificate
active
11301510
ABSTRACT:
A trench isolation type semiconductor device in which a recess is prevented from being formed in a field region and a method of fabricating the same are provided. The trench isolation type semiconductor device includes a semiconductor substrate defined by an active region and a field region, a trench formed in the field region, an oxide layer conformally formed along the inside of the trench, a liner layer conformally formed along the oxide layer, a field insulating layer formed inside the trench including the oxide layer and the liner layer, and a field protection layer formed on the field insulating layer so that a step difference does not occur on the semiconductor substrate.
REFERENCES:
patent: 6297126 (2001-10-01), Lim et al.
patent: 2001/0015046 (2001-08-01), Hong
patent: 10-0353832 (2002-09-01), None
patent: 10-2004-0004990 (2004-01-01), None
patent: 10-2004-0032531 (2004-04-01), None
Ahn Jong-hyon
Cheong Kong-soo
Kang Sung-gun
Lee Deok-hyung
Youn Ki-seog
Le Dung A.
Mills & Onello LLP
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