Trench isolation structures with oxidized silicon regions and me

Details Trench isolation structures with oxidized silicon regions and me Trench isolation structures with oxidized silicon regions and me

1996-01-31

2000-05-16

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257513, H01L 2900

Patent

active

060641045

ABSTRACT:
A trench isolation structure in a semiconductor substrate includes a trench opening in the surface of the substrate and a seamless oxide layer filling the trench. The seamless oxide layer is formed by forming a first oxide layer in the trench, adding a silicon material overlying the first oxide layer and within a gap on the first oxide layer between the trench sidewalls that tend to be produced in the preceding step, and oxidizing the silicon material to form a second oxide layer. The deposited silicon material expands during oxidation, filling the trench opening to produce a seamless oxide fill of the trench. This seamless trench isolation structure prevents accumulation of materials that reduce the yield of the finished semiconductor product.

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