Trench isolation structure of a semiconductor device and a metho

Details Trench isolation structure of a semiconductor device and a metho Trench isolation structure of a semiconductor device and a metho

1997-07-22

1999-11-30

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438426, 438435, 438444, 148DIG50, H01L 2176

Patent

active

059942002

ABSTRACT:
A semiconductor device isolation structure includes a trench formed in a substrate vertically from the major surface of the substrate, a trench plug for filling the trench, and a buried insulation region formed under the trench adjacent thereto, and a method of the same includes the steps of forming a trench in a substrate and vertically from the major surface of the substrate, selectively implanting oxide ions under the trench of the substrate, and forming a trench plug so as to fill the trench.

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patent: 5686344 (1997-11-01), Lee
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