Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-12-19
2000-10-31
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257397, 257510, 257513, 257642, 257643, 257647, 257396, H01L 2900, H01L 2976, H01L 2358, H01L 2994
Patent
active
061406910
ABSTRACT:
A trench isolation structure is provided which includes a dielectric material having a relatively low dielectric constant, K, that is approximately less than 3.8. The capacitance between active areas separated by the trench isolation structure, being directly proportional to K, is thus reduced. As a result, the lateral width of the isolation structure may be decreased without significantly increasing the capacitance between those active areas. In an embodiment, a fabrication process for the trench isolation structure may include a trench is etched within a semiconductor substrate upon which a masking layer is formed. An oxide liner is thermally grown upon the sidewalls and base of the trench. A layer of low K dielectric material is deposited across the oxide liner. A fill oxide is then formed upon the layer of dielectric material. The resulting trench isolation structure includes a low K dielectric material interposed between an oxide liner and a fill oxide. The trench isolation structure is less likely to experience current leakage during the operation of an ensuing integrated circuit employing the isolation structure.
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Fulford Jr. H. Jim
Gardner Mark I.
May Charles E.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Loke Steven H.
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