Trench isolation structure and method of manufacture therefor

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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Details

C438S425000, C438S427000, C438S435000, C438S296000, C438S221000, C438S400000, C438S248000, C257SE21549

Reexamination Certificate

active

10953632

ABSTRACT:
The present invention provides a trench isolation structure, a method for manufacturing a trench isolation structure, and a method for manufacturing an integrated circuit including the trench isolation structure. In one aspect, the method includes forming a hardmask over a substrate, etching a trench in the substrate through the hardmask, forming a liner in the trench, depositing an interfacial layer over the liner within the trench and over the hardmask and filling the trench with a dielectric material.

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