Trench isolation structure and method of forming the same

Details Trench isolation structure and method of forming the same Trench isolation structure and method of forming the same

2006-12-26

2006-12-26

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257SE21545, C257SE21572, C257SE21550, C257SE21564

Reexamination Certificate

active

07154159

ABSTRACT:
A trench isolation structure and a method of forming a trench isolation structure are provided. The method includes providing a substrate having a trench. A polysilicon liner is formed in the trench. A dielectric layer, such as spin-on glass, is formed in the trench upon the polysilicon liner.

REFERENCES:
patent: 6844591 (2005-01-01), Tran
patent: 2004/0180510 (2004-09-01), Ranade et al.

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