Trench isolation structure and method of formation

Details Trench isolation structure and method of formation Trench isolation structure and method of formation

2007-08-28

2007-08-28

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S400000, C438S418000, C438S420000, C438S423000, C438S427000, C438S431000, C438S433000, C438S435000, C438S514000, C438S546000, C257S314000, C257S374000, C257S506000, C257S510000, C257SE21551, C257SE21352, C257SE21546

Reexamination Certificate

active

10922831

ABSTRACT:
In general, the present invention discloses at least one trench isolation region formed in a semiconductor substrate to electrically and/or optically isolate at least one active region from another active region. The at least one trench isolation region comprises a bottom portion and first and second trench sidewalls. At least one trench sidewall is adjacent a doped region. The at least one sidewall adjacent a doped region has a higher impurity dopant concentration than impurity doped regions surrounding the at least one trench isolation region.

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NB83046131□□IBM Technical Disclosure Bulletin, Apr. 1983, US□□vol. No.: 25□□Issue No.: 11B.
NB83046131, Apr. 1983, IBM Technical Discloser B.

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