Trench isolation stress relief

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

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Details

257513, 257520, H01L 2176, H01L 21763

Patent

active

054481023

ABSTRACT:
In a microelectronic device formed on a substrate 12, a pair of trenches 30, 36 branch at their intersection to provide branches 31-34 surrounding a sacrificial island 42. Sacrificial island 42 may comprise substrate material or other material or a void for absorbing the axial stresses propagated along the lengths of trenches 30, 36.

REFERENCES:
patent: 3354360 (1967-11-01), Campagna et al.
patent: 4309716 (1982-01-01), El-Kareh
patent: 5094973 (1992-03-01), Pang
patent: 5217919 (1993-06-01), Gaul et al.
Translation of Japan Kokai Publication No. 04-263454 to Mitani et al., Sep. 1992, 9 pages.

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