Trench isolation process using nitrogen preconditioning to reduc

Details Trench isolation process using nitrogen preconditioning to reduc Trench isolation process using nitrogen preconditioning to reduc

1995-09-29

1999-11-16

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438437, 438424, 438788, 148DIG50, H01L 2176

Patent

active

059857358

ABSTRACT:
A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subjected to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.

REFERENCES:
patent: 5316965 (1994-05-01), Philipossian et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5643823 (1997-07-01), Ho et al.

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