Trench isolation process using nitrogen preconditioning to reduc

Details Trench isolation process using nitrogen preconditioning to reduc Trench isolation process using nitrogen preconditioning to reduc

1997-12-23

2000-09-12

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

438435, 438437, H01L 2176

Patent

active

061181684

ABSTRACT:
A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subject to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.

REFERENCES:
patent: 4631803 (1986-12-01), Hunter et al.
patent: 4740480 (1988-04-01), Ooka
patent: 5387540 (1995-02-01), Poon et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5780346 (1998-07-01), Arghavani et al.

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