Trench isolation process for integrated circuit devices

Details Trench isolation process for integrated circuit devices Trench isolation process for integrated circuit devices

1984-08-31

1986-07-01

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29576B, 29571, 148 15, 148187, 148DIG82, H01L 2176, H01L 21265

Patent

active

045971641

ABSTRACT:
Isolation trenches are formed around selected areas on an integrated circuit device, and highly doped areas are formed in the epitaxial silicon surrounding such trenches. The device is then oxidized at a low temperature, and differential oxidation growth of the highly doped areas causes a thick field oxide to grow outside the trenches while only a thin oxide grows over the selected areas.

REFERENCES:
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 4356211 (1982-10-01), Riseman
patent: 4412378 (1983-11-01), Shinada
patent: 4444605 (1984-04-01), Slawinski
patent: 4463493 (1984-08-01), Momose
patent: 4477310 (1984-10-01), Park et al.
patent: 4502913 (1985-03-01), Lechaton et al.
IBM-TDB, 25 (1983) 6131.

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