Trench isolation process and structure

Details Trench isolation process and structure Trench isolation process and structure

1987-11-17

1989-04-25

Carroll, J.

357 54, 357 55, H01L 2712, H01L 2934, H01L 2906

Patent

active

048252778

ABSTRACT:
A structure and method for forming an isolation wall in an etched trench are described. The trench walls are covered by a thin silicon oxide layer and the trench conformally filled with an oxy-nitride mixture having a particular range of composition so as to produce a neutral to slight tensile stress in the oxy-nitride relative to silicon. The structure is very simple to fabricate and creates fewer defects in the silicon substrate than prior art techniques. Buried voids in the filled trench are eliminated.

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S. Maeyama et al., Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO.sub.2 and Si.sub.3 N.sub.4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicone, vol. 21, No. 5 (May 1982) pp. 744-751.
A. G. Gaind et al., "Physicalchemical Properties of Chemical Vapor-Deposited Silicon Oxynitride from a SiH.sub.4 --CO.sub.2 --NH.sub.3 --H.sub.2 System", Journal of the Electrochemical Society, vol. 25, No. 1 (Jan. 1978) pp. 139-145.
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