Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-04-05
2005-04-05
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S427000, C438S424000, C438S788000
Reexamination Certificate
active
06875670
ABSTRACT:
In a trench isolation method, an etching mask pattern for forming a trench is formed on a semiconductor substrate. The substrate is etched to form a trench. An insulating layer is formed to fill the trench, and then a material layer is formed on the insulating layer. In this case, the material layer is made of material formed at a high temperature to density the insulating layer. The material layer and the insulating layer are planarly etched and the etching mask pattern is removed, so that a trench isolation layer is completed. Accordingly, although a densification process is avoided, it is possible to form a device isolation layer having a favorable surface profile.
REFERENCES:
patent: 6037237 (2000-03-01), Park et al.
patent: 6184077 (2001-02-01), Shin et al.
patent: 6255194 (2001-07-01), Hong
patent: 6319796 (2001-11-01), Laparra et al.
patent: 6326282 (2001-12-01), Park et al.
Lee Han-Sin
Park Moon-Han
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