Trench isolation for semiconductor devices

Details Trench isolation for semiconductor devices Trench isolation for semiconductor devices

2007-06-26

2007-06-26

Owens, Douglas W. (Department: 2821)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S513000

Reexamination Certificate

active

09496794

ABSTRACT:
In etching trench isolation structures, a pad oxide or sacrificial oxide may be formed with substantially the same (or higher) etch rate as the trench filler. Because the etch rate in the trench area is substantially similar to (or less than) the etch rate in the non-trench area, similar amounts of material are removed in both the trench area and non-trench area in a subsequent etching process. Consequently, formation of notches and grooves in the semiconductor structure is minimized. A sacrificial oxide layer may be made by depositing a layer of a suitable material on the surface of a semiconductor structure. By depositing a sacrificial oxide layer instead of thermally growing a sacrificial oxide layer, grooves and the notches in the trench areas are filled by the deposited material.

REFERENCES:
patent: 4051506 (1977-09-01), Horie
patent: 5059550 (1991-10-01), Tateoka et al.
patent: 5433794 (1995-07-01), Fazan et al.
patent: 5731241 (1998-03-01), Jang et al.
patent: 5763932 (1998-06-01), Pan et al.
patent: 5868870 (1999-02-01), Fazan et al.
patent: 5937308 (1999-08-01), Gardner et al.
patent: 5939765 (1999-08-01), Zheng et al.
patent: 5940716 (1999-08-01), Jin et al.
patent: 5994756 (1999-11-01), Umezawa et al.
patent: 6002160 (1999-12-01), He et al.
patent: 6046487 (2000-04-01), Benedict et al.
patent: 6064104 (2000-05-01), Omid-Zohoor et al.
patent: 6093953 (2000-07-01), Pan et al.
patent: 6268264 (2001-07-01), Tseng
patent: 6271561 (2001-08-01), Doan
patent: 6313010 (2001-11-01), Nag et al.
patent: 6355540 (2002-03-01), Wu
patent: 6727569 (2004-04-01), Gardner et al.
patent: 2002/0004285 (2002-01-01), Wu

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