Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1998-03-11
2000-02-01
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257510, 257524, 257547, 257354, 257374, 257395, H01L 2900, H01L 2362, H01L 2976
Patent
active
060206225
ABSTRACT:
A semiconductor device includes a semiconductor substrate in which a trench for element isolation is formed, and an element isolation oxide film buried into the trench in such a manner that the element isolation oxide film is projected from the surface of the semiconductor substrate. The element isolation oxide film which is an element isolation insulating film for defining an element forming region on the semiconductor substrate has a projection portion above the surface of the semiconductor substrate. The projection portion has the width wider than that of the trench. The projection portion and a contact portion made in contact with the semiconductor substrate within the trench are made of thermal oxide films, and a portion other than the projection portion and the contact portion is made of a CVD dioxide film.
REFERENCES:
patent: 4903095 (1990-02-01), Chapron
patent: 5646052 (1997-07-01), Lee
Fujikake Hideki
Tsuda Nobuyuki
Saadat Mahshid
United Microelectronics Corporation
Warren Matthew E.
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