Trench isolation for active areas and first level conductors

Details Trench isolation for active areas and first level conductors Trench isolation for active areas and first level conductors

1995-12-22

1998-03-31

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257513, H01L 2900

Patent

active

057341923

ABSTRACT:
A trench isolation structure for a semiconductor is provided including an isolation ring and an isolation path. The isolation ring surrounds active semiconductor areas and is bordered on the outside by inactive semiconductor area. The isolation path extends from the isolation ring through the inactive semiconductor area. A first level conductor on the isolation path electrically connects or capacitively couples a device in the active semiconductor area to a location on the substrate outside the isolation ring. The isolation path has a configuration derived from the layout of the conductor.

REFERENCES:
patent: 4746963 (1988-05-01), Uchida et al.
patent: 4903095 (1990-02-01), Chapron
patent: 5057895 (1991-10-01), Beasom
patent: 5214302 (1993-05-01), Uchida et al.
patent: 5357133 (1994-10-01), Morita
patent: 5381033 (1995-01-01), Matsuzaki

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