Trench isolation employing a high aspect ratio trench

Details Trench isolation employing a high aspect ratio trench Trench isolation employing a high aspect ratio trench

2005-08-23

2005-08-23

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C257S510000, C257S513000

Reexamination Certificate

active

06933206

ABSTRACT:
An isolation trench formed in a semiconductor substrate and is filled with at least one insulating liner layer that is deposited along sidewalls and a bottom region of the isolation trench and with at least one silicon liner layer that is deposited atop the insulating liner layer. An upper portion of the insulating liner layers are removed, and the silicon liner layers are removed. A remaining portion of the trench is filled with another insulating layer.

REFERENCES:
patent: 5116779 (1992-05-01), Iguchi
patent: 6596607 (2003-07-01), Ahn
patent: 6812115 (2004-11-01), Wieczorek et al.

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