Trench isolation employing a doped oxide trench fill

Details Trench isolation employing a doped oxide trench fill Trench isolation employing a doped oxide trench fill

2005-05-10

2005-05-10

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

Reexamination Certificate

active

06890833

ABSTRACT:
A trench isolation structure is formed in a substrate. One or more openings are formed in a surface of the substrate, and a liner layer is deposited at least along a bottom and sidewalls of the openings. A layer of doped oxide material is deposited at least in the openings, and the substrate is annealed to reflow the layer of doped oxide material. Only a portion near the surface of the substrate is removed from the layer of doped oxide material in the opening. A cap layer is deposited atop a remaining portion of the layer of doped oxide material in the opening.

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Stanley Wolf Silicon Processinf for the VSLI Era vol. 3 Lattice Press 1995 pp. 641.

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