Trench isolated transistors in semiconductor films

Details Trench isolated transistors in semiconductor films Trench isolated transistors in semiconductor films

1983-08-12

1985-03-26

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576W, 29576T, 29578, 29580, 148DIG26, 148DIG50, 148DIG85, 156612, 357 49, 357 50, H01L 2176, H01L 2195

Patent

active

045071586

ABSTRACT:
A method for trench isolation of a silicon island for device fabrication using only conventional very large scale integration (VLSI) techniques is provided. The combination of the sidewall isolation achieved with the trench isolation and the underlying oxide film create a totally dielectrically isolated structure without the possibility of latch-up between adjacent devices.

REFERENCES:
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3574008 (1971-04-01), Rice
patent: 3634150 (1972-01-01), Horn
patent: 4369565 (1983-01-01), Muramatsu
patent: 4371421 (1983-02-01), Fan et al.
patent: 4378629 (1983-04-01), Bozler et al.
Ser. No. 522,804 filed 8-12-83, Bradbury et al.

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