Trench-isolated self-aligned split-gate EEPROM transistor and me

Details Trench-isolated self-aligned split-gate EEPROM transistor and me Trench-isolated self-aligned split-gate EEPROM transistor and me

1989-03-22

1991-08-13

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 365185, H01L 2978, H01L 2704, G11C 1140

Patent

active

050400363

ABSTRACT:
An EEPROM structure requiring only two poly layers that utilizes hot electrons from the substrate for programming and poly-to-poly electron tunnelling for erasure. The structure is also advantageously utilized in an Ultra Violet Light Erasable PROM. The structure allows programming and erasure by electron tunnelling only.

REFERENCES:
patent: 4763177 (1988-08-01), Paterson
patent: 4924437 (1990-05-01), Paterson

Affiliated with

Also associated with

Rating

Trench-isolated self-aligned split-gate EEPROM transistor and me does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench-isolated self-aligned split-gate EEPROM transistor and me, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench-isolated self-aligned split-gate EEPROM transistor and me will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1531065