Trench IGBT with trench gates underneath contact areas of...

Details Trench IGBT with trench gates underneath contact areas of... Trench IGBT with trench gates underneath contact areas of...

2011-03-01

2011-03-01

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S341000, C257S328000, C257S302000

Reexamination Certificate

active

07897997

ABSTRACT:
A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode composed of doped regions in a polysilicon layer doped with dopant ions of a first conductivity type next to a second conductivity type disposed on an insulation layer above said semiconductor power device. Trench gates are formed underneath the contact areas of the clamp diodes as the buffer layer for prevention of shortage.

REFERENCES:
patent: 5365099 (1994-11-01), Phipps et al.
patent: 6246092 (2001-06-01), Fujihira et al.
patent: 7345342 (2008-03-01), Challa et al.
patent: 2003/0042525 (2003-03-01), Tanaka

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