Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Patent
1997-04-02
2000-06-20
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
257655, 257334, H01L 27095, H01L 2948
Patent
active
060780908
ABSTRACT:
A trench-gated Schottky diode of the kind described in U.S. Pat. No. 5,365,102 is provided with an integral clamping diode which protects the gate oxide from damage from high electric fields and hot carrier generation when the device is reverse-biased. The clamping diode is arranged in parallel with the normal current path through the Schottky diode and comprises a PN junction created by a diffusion of opposite conductivity to the semiconductor material of the Schottky diode. In a preferred embodiment, the clamping diode is selected to prevent significant impact ionization near the trenched gate during either steady state- or deep depletion-induced avalanche breakdown.
REFERENCES:
patent: 4982260 (1991-01-01), Chang et al.
patent: 5241195 (1993-08-01), Tu et al.
patent: 5365102 (1994-11-01), Mehrotra et al.
Grabowski Wayne B.
Korec Jacek
Malikarjunaswamy Shekar S.
Williams Richard K.
Monin, Jr. Donald L.
Parsons James E.
Siliconix incorporated
Steuber David E.
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