Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2006-01-05
2008-11-11
Pham, Thanh V (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S040000, C438S042000, C438S043000, C438S128000, C438S259000, C438S270000, C438S942000, C438S508000, C438S508000, C438S508000, C257SE29201, C257SE29257, C257SE29260
Reexamination Certificate
active
07449354
ABSTRACT:
A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.
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Grebs Thomas E.
Kraft Nathan Lawrence
Marchant Bruce Douglas
Ridley Rodney S.
Fairchild Semiconductor Corporation
Pham Thanh V
Townsend and Townsend / and Crew LLP
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