Trench gate type insulated gate bipolar transistor

Details Trench gate type insulated gate bipolar transistor Trench gate type insulated gate bipolar transistor

1995-02-07

1996-04-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257331, 257341, 257637, H01L 2702, H01L 2978

Patent

active

055085342

ABSTRACT:
A semiconductor device including a layer formed without being affected by a stepped ground pattern and a method of fabricating the semiconductor device are disclosed. Cap portions (30) (insulating layers) formed over trenches (13) and covering doped polysilicon (5) have an inclined surface (26) which satisfies Y/X .ltoreq.5 where X is the length of the inclined surface (26) in a direction of the surface of a body (50) and Y is the height of the inclined surface (26) from the surface of the body (50). Formation of the insulating layers having the smooth inclined surface satisfying Y/X.ltoreq.5 permits a first main electrode to be formed non-defectively without being affected by the ground pattern including the insulating layers.

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 4893165 (1990-01-01), Miller et al.
patent: 5034785 (1991-07-01), Blanchard

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