Trench gate structures

Details Trench gate structures Trench gate structures

1984-11-26

1989-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 2311, 357 55, 437 38, 437203, H01L 2978

Patent

active

048355852

ABSTRACT:
The specification describes several forms of trench gate MOS transistors and methods for making them. The structure further includes a pair of sidewall guards on opposing sidewalls to prevent inversion of the sidewalls when the trench gate is turned on.

REFERENCES:
patent: 4324038 (1982-04-01), Chang et al.
patent: 4455740 (1984-06-01), Iwai
patent: 4499652 (1985-02-01), Shrivastava
Rideout et al., "MOSFETs with Polysilicon Gates Self--Aligned to the Field Isolation and to the Source/Drain Regions", International Electron Devices Meeting (Technical Digest), Wash, DC, USA, Dec. 6-18, 1976.

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