Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1998-02-17
1999-12-07
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257138, 257152, H01L 29745, H01L 29749
Patent
active
059988118
ABSTRACT:
A trench emitter controlled thyristor 30 having a collector layer 32, a drift layer 34, a body layer 36, and a floating layer 38. Each of the layers 32, 34, 36, and 38 contacts the adjacent layer(s). The floating layer 38 does not cover the entirety of the adjacent layer (the body layer 36) but at one of the lateral ends of the thyristor 30, an emitter 40 is formed. A gate area (or electrode) 43 is formed to span laterally across the thyristor 30. Additionally, trenches are formed into the lateral edges 44 of the body layer 36 and a portion of the drift layer 34. Within the trenches 44 are formed additional gate area 42 which runs for substantially the length of the thyristor 30. The gate 42 is kept electrically isolated from the remainder of the thyristor by an insulating region 46 directly over the body layer 36.
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Intersil Corporation
Jackson, Jr. Jerome
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