Trench emitter controlled thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level

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Details

257138, 257152, H01L 29745, H01L 29749

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active

059988118

ABSTRACT:
A trench emitter controlled thyristor 30 having a collector layer 32, a drift layer 34, a body layer 36, and a floating layer 38. Each of the layers 32, 34, 36, and 38 contacts the adjacent layer(s). The floating layer 38 does not cover the entirety of the adjacent layer (the body layer 36) but at one of the lateral ends of the thyristor 30, an emitter 40 is formed. A gate area (or electrode) 43 is formed to span laterally across the thyristor 30. Additionally, trenches are formed into the lateral edges 44 of the body layer 36 and a portion of the drift layer 34. Within the trenches 44 are formed additional gate area 42 which runs for substantially the length of the thyristor 30. The gate 42 is kept electrically isolated from the remainder of the thyristor by an insulating region 46 directly over the body layer 36.

REFERENCES:
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patent: 4827321 (1989-05-01), Baliga
patent: 5304821 (1994-04-01), Hagino
patent: 5471075 (1995-11-01), Shekar
patent: 5477064 (1995-12-01), Terashima
patent: 5488236 (1996-01-01), Baliga
patent: 5554862 (1996-09-01), Omura
patent: 5659185 (1997-08-01), Iwamuro
Bhalla, IEEE Elec. Dev. Let.vol. 16, No. 2, Feb. 1995 "ESTD in Diverter".
Sridhar, IEEE Elec. Dev. Lett vol. 77, no. 1, Jan. 1996 "The Dual Gate . . . (DG-EST)".

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