Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-12-18
1999-12-21
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257513, 257519, 257374, 438438, 438435, 438424, H01L 2900
Patent
active
060052791
ABSTRACT:
An insulating trench isolation structure is formed in a semiconductor substrate with a spacer overlying the trench edge to prevent oxide loss during subsequent etching, thereby preventing junction leakage, particulary upon silicidation. Embodiments include providing a step in the trench fill and forming the nitride spacer during gate electrode sidewall spacer formation. The protective nitride spacer etches more slowly than oxide and, hence, remains after subsequent oxide etching and cleaning.
REFERENCES:
patent: 5424240 (1995-06-01), Han
patent: 5506168 (1996-04-01), Morita et al.
patent: 5679599 (1997-10-01), Mehta
patent: 5801082 (1998-09-01), Tseng
patent: 5854121 (1998-12-01), Gardner et al.
patent: 5872045 (1999-02-01), Lou et al.
Advanced Micro Devices , Inc.
Saadat Mahshid
Tran H. D.
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