Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Reexamination Certificate
2008-07-08
2008-07-08
Griffin, Steven P. (Department: 1791)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
C117S053000, C117S043000, C257S347000, C257S627000, C438S486000, C438S406000
Reexamination Certificate
active
07396407
ABSTRACT:
The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recrystallized to the orientation of an underlying single-crystal Si template after an amorphization step. For the case of amorphized Si regions recrystallizing to (100) surface orientation, the trench-edge-defect-free recrystallization of edge-angle-optimized solid phase epitaxy may be achieved in rectilinear Si device regions whose edges align with the (100) crystal's in-plane <100> directions.
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Saenger Katherine L.
Sung Chun-yung
Yin Haizhou
Griffin Steven P.
International Business Machines - Corporation
Malekzadeh Seyed Masoud
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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