Trench-edge-defect-free recrystallization by...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth

Reexamination Certificate

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C117S053000, C117S043000, C257S347000, C257S627000, C438S486000, C438S406000

Reexamination Certificate

active

07396407

ABSTRACT:
The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recrystallized to the orientation of an underlying single-crystal Si template after an amorphization step. For the case of amorphized Si regions recrystallizing to (100) surface orientation, the trench-edge-defect-free recrystallization of edge-angle-optimized solid phase epitaxy may be achieved in rectilinear Si device regions whose edges align with the (100) crystal's in-plane <100> directions.

REFERENCES:
patent: 7253034 (2007-08-01), Chan et al.
patent: 2006/0091427 (2006-05-01), Waite et al.
patent: 2006/0276011 (2006-12-01), Fogel et al.
patent: 2006/0292770 (2006-12-01), Wu et al.
U.S. Appl. No. 11/142,646 entitled “Amorphization/Templated Recrystallization Method for Hybrid Orientation Substrates” filed on Jun. 1, 2005, First Named Inventor: Keith Fogel.
U.S. Appl. No. 10/250,241 entitled “High Performance CMOS Devices on Hybrid Crystal Oriented Substrates” filed on Jun. 17, 2003, First Named Inventor: Bruce Doris.
Yang, M. et al. “High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations,” IEDM 2003 Paper 18.7.
Burbure, N. et al., “The effect of oxide trenches on defect formation and evolution in ion-implanted silicon” Mat. Res. Soc. Symp. Proc. 810 C4.19.1 (2004).
Sanuki, T. et al., “New Stress Inducing Technique of Epitaxial Si on Recessed S/D Fabricated in Substrate Strained-Si of <100>- Channel on Rotated Wafers,” in IEDM 2004 Paper 9.3.
Komoda, T. et al., “Mobility Improvement for 45nm Node by Combination of Optimized Stress Control and Channel Orientation Design” 2004 IEEE, IEDM, 9.3.1 - 9.3.4.

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