Trench DMOS power transistor with field-shaping body profile and

Details Trench DMOS power transistor with field-shaping body profile and Trench DMOS power transistor with field-shaping body profile and

1988-12-27

1991-12-10

Jackson, Jr., Jerome

Fishing, trapping, and vermin destroying

357 231, 357 238, 437 38, H01L 2910, H01L 2978, H01L 2968, H01L 2701

Patent

active

050722662

ABSTRACT:
Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned in order to suppress oxide dielectric breakdown, using a shaped deep body junction that partly lies below the trench bottom to force voltage breakdown away from the trench surfaces and into the bulk of the semiconductor material, and using special procedures for growth of gate oxide at various trench corners.

REFERENCES:
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4663644 (1987-05-01), Shimizu
patent: 4680853 (1987-07-01), Lidow et al.
patent: 4767722 (1988-08-01), Blanchard
patent: 4794561 (1988-12-01), Hsu
patent: 4824793 (1989-04-01), Richardson et al.
patent: 4893160 (1990-01-01), Blanchard
Bulucea, C., "Avalanche Injection into the Oxide in Silicon Gate-Controlled Devices I. Theory", Solid-State Electronics, 1975, vol. 18, pp. 363-374.
Bulucea, C., "Avalanche Injection into the Oxide in Silicon Gate-Controlled Devices II. Experimental Results" Solid-State Electronics, 1975, vol. 18, pp. 381-391.
Marcus and Sheng, "The Oxidation of Shaped Silicon Surfaces", Journal Electrochemical Society: Solid-State Science and Technology, vol. 129, (1982), pp. 1278-1282.
D. Ueda, H. Takagi and G. Kano, "A New Vertical Power MOSFET Structure with Extremely Reduced On-Resistance" IEEE Trans. Electron Devices, vol. ED-32 (1985) pp. 2-6.
H. R. Chang et al., "Self-Aligned UMOSFET's with a Specific On-Resistance of 1 m.OMEGA.-cm.sup.2 " IEEE Trans. Electron Devices, vol. ED-34 (1987) pp. 2329-2334.
Wilson and Marcus, "Oxidation of Curved Silicon Surfaces", Journal Electrochemical Society: Solid-State Science and Technology, vol. 134 (1987) pp. 481-490.
K. Yamabe and K. Imai "Nonplanar Oxidation and Reduction of Oxide Leakage Currents at Silicon Corners by Rounding-Off Oxidation" IEEE Trans. Electron Devices, vol. ED-34 (1987) pp. 1681-1687.

Affiliated with

Also associated with

Rating

Trench DMOS power transistor with field-shaping body profile and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench DMOS power transistor with field-shaping body profile and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench DMOS power transistor with field-shaping body profile and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1044073