Trench DMOS power transistor with field-shaping body profile and

Details Trench DMOS power transistor with field-shaping body profile and Trench DMOS power transistor with field-shaping body profile and

1991-09-18

1994-03-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437203, 437958, 148DIG126, 257328, 257330, 257336, H01L 21335

Patent

active

052984427

ABSTRACT:
Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned, using a shaped deep body junction that partly lies below the trench bottom, and using special procedures for growth of gate oxide at various trench corners.

REFERENCES:
patent: 4398339 (1983-08-01), Blanchard et al.
patent: 4506435 (1985-03-01), Pliskin et al.
patent: 4764481 (1988-08-01), Alvi et al.
patent: 4767722 (1988-08-01), Blanchard
patent: 4808543 (1989-02-01), Parrillo et al.
patent: 4914058 (1990-04-01), Blanchard
patent: 4983535 (1991-01-01), Blanchard
patent: 5016068 (1991-05-01), Mori
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5160491 (1992-11-01), Mori

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