Trench-defined charge-coupled device

Electrical pulse counters – pulse dividers – or shift registers: c – Counting or dividing in incremental steps – Beam type tube

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377 60, 357 55, H01L 2978, H01L 2906, G11C 1928

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active

050559001

ABSTRACT:
A charge-coupled device (CCD) is formed by first defining relatively deep trenches having relatively small lateral dimensions in the surface of a silicon bulk region. A relatively thin silicon dioxide layer is formed over the silicon surface and inside each trench to cover the internal surfaces thereof. Finally, respective conducting electrode layers are formed over each trench covering the silicon dioxide layer within the trench. Such a CCD structure provides improved packing density and versatility of function over a conventional surface electrode CCD structures. When used in an image-sensing device, the trench-defined CCD structure provides improved quantum efficiency, owing to the deeper potential wells which may be formed in such structures for capturing photogenerated charge carriers.

REFERENCES:
patent: 3848328 (1974-11-01), Ando et al.
patent: 4032952 (1977-06-01), Ohba et al.
patent: 4488163 (1984-12-01), Bluzer et al.
patent: 4527183 (1985-07-01), Anthony et al.
patent: 4760273 (1988-07-01), Kimata
patent: 4926225 (1990-05-01), Hosack
W. F. Richardson et al., "A Trench Transistor Cross-Point Cell", IEDM85, pp. 714-717, 1985.
T. Yamada et al., "Trench CCD Image Sensor", IEEE Transactions on Consumer Electronics, vol. 35, No. 3, Aug. 1989.
Fossum "A Novel Trench-Defined MISM CCD Structure . . . " IEEE Electron Device Letters, vol. 10 (5/89) 3 p.

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