Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2005-11-14
2008-05-06
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257SE25032, C257S099000
Reexamination Certificate
active
07368756
ABSTRACT:
A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
REFERENCES:
patent: 4966862 (1990-10-01), Edmond
patent: 5418190 (1995-05-01), Cholewa et al.
patent: 5429954 (1995-07-01), Gerner
patent: 5631190 (1997-05-01), Negley
patent: 5912477 (1999-06-01), Negley
patent: 5916460 (1999-06-01), Imoto et al.
patent: 5923053 (1999-07-01), Jakowatz et al.
patent: 5923946 (1999-07-01), Negley
patent: 5972781 (1999-10-01), Wegleiter et al.
patent: 6048748 (2000-04-01), Khare et al.
patent: 6197609 (2001-03-01), Tsutsui et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6413839 (2002-07-01), Brown et al.
patent: 6518079 (2003-02-01), Imler
patent: 6580054 (2003-06-01), Liu et al.
patent: 2005/0017258 (2005-01-01), Fehrer et al.
patent: 09270528 (1997-10-01), None
patent: 09270528 (1998-01-01), None
patent: 2000/261042 (2000-09-01), None
patent: WO 02/37578 (2002-05-01), None
patent: WO 03/030271 (2003-04-01), None
patent: WO 2003/030271 (2003-04-01), None
patent: WO 03/010817 (2003-06-01), None
patent: WO 03/010817 (2003-06-01), None
Taiwanese Search Report, Taiwanese Application No. 0292119743 dated Jan. 12, 2007.
International Search Report for PCT/US03/22411, Jun. 7, 2004.
Andrews Peter
Bruhns Michael T.
LaHaye Jeff
Williams Brad
Cree Inc.
Le Thao P.
Myers Bigel Sibley & Sajovec P.A.
LandOfFree
Trench cut light emitting diodes and methods of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench cut light emitting diodes and methods of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench cut light emitting diodes and methods of fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3985168