Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Substrate dicing
Reexamination Certificate
2006-02-07
2006-02-07
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Substrate dicing
C438S637000
Reexamination Certificate
active
06995032
ABSTRACT:
A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
REFERENCES:
patent: 4966862 (1990-10-01), Edmond
patent: 5418190 (1995-05-01), Cholewa et al.
patent: 5429954 (1995-07-01), Gerner
patent: 5631190 (1997-05-01), Negley
patent: 5912477 (1999-06-01), Negley
patent: 5916460 (1999-06-01), Imoto et al.
patent: 5923053 (1999-07-01), Jakowetz et al.
patent: 5923946 (1999-07-01), Negley
patent: 5972781 (1999-10-01), Wegleiter et al.
patent: 6048748 (2000-04-01), Khare et al.
patent: 6413839 (2002-07-01), Brown et al.
patent: 6518079 (2003-02-01), Imler
patent: 6580054 (2003-06-01), Liu et al.
patent: 2005/0017258 (2005-01-01), Fehrer et al.
patent: 09270528 (1997-10-01), None
patent: 09270528 (1998-01-01), None
patent: WO 02/37578 (2002-05-01), None
patent: WO 03/030271 (2003-04-01), None
patent: WO 2003/030271 (2003-04-01), None
patent: WO 03/010817 (2003-06-01), None
patent: WO 03/010817 (2003-06-01), None
International Search Report for PCT/US03/22411, Jun. 7, 2004.
Andrews Peter
Bruhns Michael T.
LaHaye Jeff
Williams Brad
Cree Inc.
Le Thao P.
Myers Bigel Sibley & Sajovec P.A.
LandOfFree
Trench cut light emitting diodes and methods of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench cut light emitting diodes and methods of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench cut light emitting diodes and methods of fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3707632