Trench contact process

Details Trench contact process Trench contact process

1997-06-30

2000-08-29

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438221, 438268, 438337, 257329, H01L 2176

Patent

active

061107999

ABSTRACT:
A trench process for establishing a contact for a semiconductor device with trenches such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs which reduces the number of masks and eliminates the need for lateral diffusion into the trench channel region. Improved control of the parasitic transistor in the trench MOSFET is also achieved. The cell size/pitch is reduced relative to conventional processes which require source block and P+ masks.

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patent: 5879971 (1999-03-01), Witek
Stanley Wolf Silicon Processing for the VSLI Era vol. 2 Lattice press p. 558, 1990.

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