Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1992-07-17
1994-02-01
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257520, 257621, 257622, H01L 2906, H01L 2348
Patent
active
052834611
ABSTRACT:
The trench pattern of a dielectrically isolated island architecture is filled with doped polysilicon and used as an interconnect structure for circuit devices that are supported within the islands, thereby decreasing the amount of topside interconnect and reducing the potential for parasitics beneath tracks of surface metal. The trench pattern may serve as a voltage distribution network or provide crossunders beneath surface tracks. In addition, at least one of the islands may contain one or more auxiliary poly-filled trench regions to perform the crossunder function. Such an auxiliary trench region may be also provided in an island that contains a circuit device. Manufacture of the conductor-filled trench structure may be facilitated by depositing polysilicon over a dielectrically coated trench grid structure and then planarizing the polysilicon to the surface of the oxide dielectric. The exposed polysilicon is doped and then oxidized to seal the dopant, which forms a thin oxide layer on the poly. The oxide dielectric for the trench can then be selectively patterned to form a mask to be for the initial doping of the islands.
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Harris Corporation
Hille Rolf
Limanek Robert
Wands Charles E.
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