Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-05-08
1992-12-22
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257244, 257249, H01L 2978, H01L 2712, H01L 2906
Patent
active
051737566
ABSTRACT:
A charge-coupled device having a three-dimensional trench structure that achieves a highly effective sensing and storage area in a CCD imager while maintaining a small cell layout area. The trench CCD device includes a plurality of trench electrodes etched in the surface of the device, with surface electrodes in between. The trenches are shaped to facilitate charge transfer along their sidewalls and to maximize trench surface area.
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Liw, "V-Grooved Charge-Coupled Device", IBM Technical Disclosure Bulletin, vol. 20, No. 11, Mar. 1978.
Fossum, "A Novel Trench-Defined Misim CCD Structure for X-ray Imaging and Other Applications," IEEE Electron Device Letters, vol. 10, No. 5, May 1989.
Wong Hon-Sum P.
Yao Ying L.
International Business Machines - Corporation
James Andrew J.
Ngo Ngan Van
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