Trench charge-coupled device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257244, 257249, H01L 2978, H01L 2712, H01L 2906

Patent

active

051737566

ABSTRACT:
A charge-coupled device having a three-dimensional trench structure that achieves a highly effective sensing and storage area in a CCD imager while maintaining a small cell layout area. The trench CCD device includes a plurality of trench electrodes etched in the surface of the device, with surface electrodes in between. The trenches are shaped to facilitate charge transfer along their sidewalls and to maximize trench surface area.

REFERENCES:
patent: 3848328 (1974-11-01), Ando et al.
patent: 4106046 (1978-08-01), Nathanson et al.
patent: 4173765 (1979-11-01), Heald et al.
patent: 4234887 (1980-11-01), Vanderslice, Jr.
patent: 4760273 (1988-07-01), Kimata
patent: 4814843 (1989-03-01), Nishizawa
patent: 4878102 (1989-10-01), Bakker et al.
patent: 5055900 (1991-10-01), Fossum et al.
Liw, "V-Grooved Charge-Coupled Device", IBM Technical Disclosure Bulletin, vol. 20, No. 11, Mar. 1978.
Fossum, "A Novel Trench-Defined Misim CCD Structure for X-ray Imaging and Other Applications," IEEE Electron Device Letters, vol. 10, No. 5, May 1989.

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