Trench capacitor with void-free conductor fill

Details Trench capacitor with void-free conductor fill Trench capacitor with void-free conductor fill

2006-09-21

2009-02-24

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C257S301000, C257SE21651

Reexamination Certificate

active

07494891

ABSTRACT:
A method forms a node dielectric in a bottle shaped trench and then deposits an initial conductor within the lower portion of the bottle shaped trench, such that a void is formed within the initial conductor. Next, the method forms an insulating collar in the upper portion of the bottle shaped trench above the initial conductor. Then, the method simultaneously etches a center portion of the insulating collar and the initial conductor until the void is exposed. This etching process forms a center opening within the insulating collar and the initial conductor. Additional conductor is deposited in the center opening such that the additional conductor is formed at least to the level of the surface of the substrate.

REFERENCES:
patent: 6194755 (2001-02-01), Gambino et al.
patent: 6284665 (2001-09-01), Lill et al.
patent: 6310375 (2001-10-01), Schrems
patent: 6559030 (2003-05-01), Doan et al.
patent: 6809005 (2004-10-01), Ranade et al.
patent: 7157327 (2007-01-01), Haupt
patent: 2004/0082137 (2004-04-01), Huang et al.
patent: 2004/0214391 (2004-10-01), Chen et al.
patent: 2005/0009268 (2005-01-01), Cheng et al.

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