Trench capacitor process for high density dynamic ram

Details Trench capacitor process for high density dynamic ram Trench capacitor process for high density dynamic ram

1988-01-25

1989-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437 60, 437 69, 437203, 437919, 156643, H01L 21302, H01L 2176

Patent

active

048309818

ABSTRACT:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench; a partial etch followed by regrowth of oxide is used prior to the final etch for most of the depth of the trench, to thereby reduce the effect of undercut. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A refractory metal word line forms the gate of the access transistor at a hole in the polysilicon field plate.

REFERENCES:
patent: Re32090 (1986-03-01), Jaccodine et al.
patent: 4630237 (1986-12-01), Miura et al.
patent: 4649625 (1987-03-01), Lu
patent: 4672410 (1987-06-01), Miura et al.
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 4683486 (1987-07-01), Chatterjee et al.
patent: 4683643 (1987-08-01), Nakajima et al.
patent: 4688063 (1987-08-01), Lu et al.
patent: 4734384 (1988-03-01), Tsuchiya
Shah et al., "A 4-Mbit DRAM with Transistor Cell", IEEE J. of Solid State Circuits, vol. SC-21, No. 5, Oct. 86, pp. G18-G26.

Affiliated with

Also associated with

Rating

Trench capacitor process for high density dynamic ram does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench capacitor process for high density dynamic ram, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench capacitor process for high density dynamic ram will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2322379