Trench capacitor process for high density dynamic RAM

Details Trench capacitor process for high density dynamic RAM Trench capacitor process for high density dynamic RAM

1984-07-03

1988-01-26

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 54, 357 55, 365149, H01L 2978

Patent

active

047219874

ABSTRACT:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench; a partial etch followed by regrowth of oxide is used prior to the final etch for most of the depth of the trench, to thereby reduce the effect of undercut. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A refractory metal word line forms the gate of the access transistor at a hole in the polysilicon field plate.

REFERENCES:
patent: 4319342 (1982-03-01), Scheuerlein
patent: 4397075 (1983-08-01), Fatula et al.

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