Trench capacitor and transistor structure and method for making

Details Trench capacitor and transistor structure and method for making Trench capacitor and transistor structure and method for making

1990-09-05

1993-09-14

Fourson, George

Fishing, trapping, and vermin destroying

437 47, 437 90, 257302, H01L 2174

Patent

active

052448240

ABSTRACT:
A trench capacitor and transistor structure is formed in a semiconductor device. In one form, a transistor is fabricated within a cylindrical trench capacitor. The capacitor is formed within two displaced parallel planes in a substrate material, and has two electrodes which are separated by a dielectric material. The electrodes and dielectric are formed on a wall and a floor of the cylindrical trench. A column of epitaxial material is grown from the floor of the trench. A source region is formed by doping the top portion of the epitaxial column, and a drain region is formed by doping the floor of the trench. A gate electrode is deposited into the trench, creating a channel region along the sides of the epitaxial column. Thus, a transistor is also formed within the two displaced parallel planes in the substrate material.

REFERENCES:
patent: 4651184 (1987-03-01), Malhi
patent: 4686552 (1987-08-01), Teng et al.
patent: 4843025 (1989-06-01), Morita
patent: 4845539 (1989-07-01), Inoue
patent: 5032882 (1991-07-01), Okamura et al.
patent: 5122848 (1992-06-01), Lee et al.
IBM Technical Disclosure Bulletin vol. 30, No. 8, Jan. 1988, "Process to Make . . . Memory Cells".
High Performance CMOS Surrounding Gate Transistor (SGT) for Ultra High Density ISIs, by H. Takato, et al, International Electron Devices Meeting, 1988, pp. 22-25.
A Surrounding Gate Transistor (SGT) Cell for 64/266Mbit DRAMs; by K. Sunouchi et al International Electron Devices Meeting, 1989, pp. 22-26.
Selective Epitaxial Trench (SET), by V. J. Silvestri, Journal of Electrochemical Society, Solid State Science and Technology, Jul. 1988, vol. 135, No. 7, pp. 1808-1812.

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