Trench capacitor and process for preventing parasitic leakage

Details Trench capacitor and process for preventing parasitic leakage Trench capacitor and process for preventing parasitic leakage

2005-06-07

2005-06-07

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C438S247000, C438S249000, C438S386000

Reexamination Certificate

active

06902982

ABSTRACT:
A trench capacitor process for preventing parasitic leakage. The process is capable of blocking leakage current from a parasitic transistor adjacent to the trench, and includes the steps of forming a doping layer and a cap layer covering portions of the sidewall of the trench and performing an annealing process on the doping layer to form a dopant region in the substrate adjacent to each sidewall of the trench and blocks leakage current from a parasitic transistor adjacent to the trench.

REFERENCES:
patent: 4782036 (1988-11-01), Becker et al.
patent: 6163045 (2000-12-01), Mandelman et al.
patent: 6265279 (2001-07-01), Radens et al.
patent: 402807 (2000-08-01), None

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