Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-07-12
2011-07-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C438S131000, C257SE21585, C257SE23147, C257SE21591
Reexamination Certificate
active
07977766
ABSTRACT:
Trench anti-fuse structures, design structures embodied in a machine readable medium for designing, manufacturing, or testing a programmable integrated circuit. The anti-fuse structure includes a trench having a plurality of sidewalls that extend into a substrate, a doped region in the semiconductor material of the substrate proximate to the sidewalls of the trench, a conductive plug in the trench, and a dielectric layer on the sidewalls of the trench. The dielectric layer is disposed between the conductive plug and the doped region. The dielectric layer is configured so that a programming voltage applied between the doped region and the conductive plug causes a breakdown of the dielectric layer within a region of the trench. The trench sidewalls are arranged with a cross-sectional geometrical shape that is independent of position between a bottom wall of the deep trench and a top surface of the substrate.
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Booth, Jr. Roger A.
Cheng Kangguo
Mandelman Jack A.
Tonti William R.
International Business Machines - Corporation
Pert Evan
Wood Herron & Evans LLP
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