Treatment process for semiconductor wafer

Details Treatment process for semiconductor wafer Treatment process for semiconductor wafer

1983-12-28

1986-03-11

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

148191, 2504922, B05D 302

Patent

active

045754667

ABSTRACT:
A process for preparing a semiconductor wafer having one region including impurities at a concentration of more than 5.times.10.sup.16 cm.sup.-3 therein, in which an energy beam is radiated onto this one region of the semiconductor wafer in order to form small defects therein and out diffuse the impurities, respectively. Thereby, a region including no small defects is formed in a surface region of the semiconductor wafer and another region including many defects is formed in an internal region of the semiconductor wafer.

REFERENCES:
patent: 4220483 (1980-09-01), Cazcarra
patent: 4249962 (1981-02-01), Cellar
patent: 4257827 (1981-03-01), Schwuttke et al.
patent: 4437922 (1984-03-01), Bischoff et al.
"Ion-Beam Gettering", by Heiner Ryssel, pp. 233-237.
"Intrinsic Gettering by Oxide Precipitate Induced Dislocations in Czochralski Si", by T. Y. Tan, E. E. Gardner, and W. K. Tice.

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